Solved question paper for BE Dec-2011 (DIPLOMA 1st-2nd)

Basic electronics

Previous year question paper with solutions for Basic electronics Dec-2011

Our website provides solved previous year question paper for Basic electronics Dec-2011. Doing preparation from the previous year question paper helps you to get good marks in exams. From our BE question paper bank, students can download solved previous year question paper. The solutions to these previous year question paper are very easy to understand.

These Questions are downloaded from www.brpaper.com You can also download previous years question papers of 10th and 12th (PSEB & CBSE), B-Tech, Diploma, BBA, BCA, MBA, MCA, M-Tech, PGDCA, B-Com, BSc-IT, MSC-IT.

Print this page

Question paper 1

  1. SECTION-A

    Q1. Do as directed.

    a. N-type semiconductors are formed by adding ….… impurities to a pure semiconductor.

    Answer:

  2. b. Efficiency of half wave rectifier is ……………………..

    Answer:

  3. c. Center-Tap transformer is used in …………. Wave rectifier.

    Answer:

  4. d. Filter circuits are used to reduce ……………….

    Answer:

  5. e. The value of knee voltage for silicon diode is ………………. Volt.

    Answer:

  6. f. Zener diode is made to operate in ………. Region.

    Answer:

  7. g. In BJT, leakage current mainly depends on ……………………

    Answer:

  8. h. The point of intersection of dc and ac load line is called ……………..

    Answer:

  9. i. A.C. load line of a transistor is steeper than its D.C. load line. (T/F)

    Answer:

  10. j. The best biasing method is achieved by adopting …………… biasing circuit.

    Answer:

  11. k. JFET stands for ……………….

    Answer:

  12. l. MOSFET is a …………….. Controlled device.

    Answer:

  13. m. The emitter and collector regions of BJT is …………………… and ……………….. Doped.

    Answer:

  14. n. Free electrons exists in ………… band.

    Answer:

  15. o. When both the junctions of a transistor are forward biased, it is said to be in ……… region.

    Answer:

  16. SECTION-B

    Q2. Attempt any five questions.

    i. Explain with suitable diagram Intrinsic and Extrinsic semiconductors.

    Answer:

  17. ii. What is Zener diode? Draw its symbol and explain its characteristics.

    Answer:

  18. iii. Explain the working of half wave rectifier.

    Answer:

  19. iv. Explain the working of NPN transistor.

    Answer:

  20. v. Explain the difference between FET and BJT.

    Answer:

  21. vi. What do you mean by h parameters of transistors?

    Answer:

  22. vii. In what way the temperature variations affect the operating point of a transistor?

    Answer:

  23. viii. Explain the phase reversal of output voltage with respect to input voltage in an amplifier.

    Answer:

  24. SECTION-C

    Q3. Attempt any three questions.

    a. Explain conductors, insulators and semiconductors on the basis of their energy band diagram

    Answer:

  25. b. Draw circuit of a full wave bridge rectifier and explain its working. Draw the output waveform.

    Answer:

  26. c. Explain PN junction and draw the V-I characteristics of PN junction.

    Answer:

  27. d. Explain the input and output characteristics of CE configuration. Derive the relation between α and β.

    Answer:

  28. e. Write a short note on (any two)

    i. Light Emitting Diode

    ii. Drift and Diffusion current

    iii. Filter circuits.

    Answer: