Solved question paper for BE Dec-2011 (DIPLOMA electronics and communication engineering 1st-2nd)

Basic electronics

Previous year question paper with solutions for Basic electronics Dec-2011

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Question paper 1

  1. SECTION-A

    Q1. Do as directed.

    a. N-type semiconductors are formed by adding ….… impurities to a pure semiconductor.

    Answer:

  2. b. Efficiency of half wave rectifier is ……………………..

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  3. c. Center-Tap transformer is used in …………. Wave rectifier.

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  4. d. Filter circuits are used to reduce ……………….

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  5. e. The value of knee voltage for silicon diode is ………………. Volt.

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  6. f. Zener diode is made to operate in ………. Region.

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  7. g. In BJT, leakage current mainly depends on ……………………

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  8. h. The point of intersection of dc and ac load line is called ……………..

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  9. i. A.C. load line of a transistor is steeper than its D.C. load line. (T/F)

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  10. j. The best biasing method is achieved by adopting …………… biasing circuit.

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  11. k. JFET stands for ……………….

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  12. l. MOSFET is a …………….. Controlled device.

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  13. m. The emitter and collector regions of BJT is …………………… and ……………….. Doped.

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  14. n. Free electrons exists in ………… band.

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  15. o. When both the junctions of a transistor are forward biased, it is said to be in ……… region.

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  16. SECTION-B

    Q2. Attempt any five questions.

    i. Explain with suitable diagram Intrinsic and Extrinsic semiconductors.

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  17. ii. What is Zener diode? Draw its symbol and explain its characteristics.

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  18. iii. Explain the working of half wave rectifier.

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  19. iv. Explain the working of NPN transistor.

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  20. v. Explain the difference between FET and BJT.

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  21. vi. What do you mean by h parameters of transistors?

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  22. vii. In what way the temperature variations affect the operating point of a transistor?

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  23. viii. Explain the phase reversal of output voltage with respect to input voltage in an amplifier.

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  24. SECTION-C

    Q3. Attempt any three questions.

    a. Explain conductors, insulators and semiconductors on the basis of their energy band diagram

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  25. b. Draw circuit of a full wave bridge rectifier and explain its working. Draw the output waveform.

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  26. c. Explain PN junction and draw the V-I characteristics of PN junction.

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  27. d. Explain the input and output characteristics of CE configuration. Derive the relation between α and β.

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  28. e. Write a short note on (any two)

    i. Light Emitting Diode

    ii. Drift and Diffusion current

    iii. Filter circuits.

    Answer: