Solved question paper for BE Dec-2017 (DIPLOMA electronics and communication engineering 1st-2nd)

Basic electronics

Previous year question paper with solutions for Basic electronics Dec-2017

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Question paper 1

  1. SECTION-A

    Q1. Fill in the blanks.

    a. The input impedance of a FET is __________than that of BJT.

    Answer:

  2. b. ICEO = _______________ICBO.

    Answer:

  3. c. The process of adding impurities is called ____________.

    Answer:

  4. d. The turn on voltage in a silicon diode is _________.

    Answer:

  5. e. A zener diode is always operated in ___________region.

    Answer:

  6. f. Holes are _______carriers in N-type semiconductors.

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  7. g. When the gate terminal of MOSFET is positive it is said to operate in _______.

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  8. h. The unit of hie is______.

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  9. i. In a transistor there are____________ PN junctions.

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  10. j. The point of intersection of dc and ac load line is called__________

    Answer:

  11. SECTION-B

    Q2. Attempt any five questions.

    i. What is ripple factor? How it can be minimized?

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  12. ii. Explain zener diode as a voltage regulator.

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  13. iii. Explain intrinsic and extrinsic semiconductors.

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  14. iv. Give construction and working of MOSFET.

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  15. v. Explain the working of half wave rectifier.

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  16. vi. Draw the circuit diagram of CE amplifier. Explain briefly.

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  17. vii. What do you mean by h parameters of a transistor? Explain briefly.

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  18. SECTION-C

    Q3. Attempt any three questions.

    a. Explain construction of NPN transistor. Explain how it can be used as amplifier

    Answer:

  19. b. Discuss energy band structure for insulators, semiconductors and conductors.

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  20. c. Write a short note on (any two)

    i. Filter circuits

    ii. AC and DC load line

    iii. Avalanche breakdown

    Answer:

  21. d. What are various transistor biasing circuits? Compare their advantages and disadvantages.

     

    Answer:

  22. e. With the help of a diagram, explain the working of a bridge rectifier.

    Answer: