Himachal Pradesh Takniki Shiksha Board | 3rd
Electronics-1
Browse E1 3rd question papers for exam preparation and revision.
📚 Syllabus - E1 (Diploma Electrical Engineering 3rd)
1. Introduction (5 hrs)
1.1 Brief history of development of electronics (vacuum tube to solid
state)
1.2 Active and passive components
1.3 Concept of current and voltage sources, constant voltage and
current sources, their graphical representation. Conversion of
voltage source into current source and vice-versa
1.4 Difference between actual voltage source and constant voltage
source
2. Semi-conductor Theory (10 hrs)
2.1 Atomic structure, crystalline structure
2.2 Energy band theory of crystals, energy band structure of insulator,
semiconductor and conductor, generation and recombination of
electron hole pairs. Energy band structure of Silicon and
Germanium
2.3 Silicon versus Germanium for mobility and conductivity
2.4 Concept of Doping, intrinsic and extrinsic semiconductors
2.5 Effect of temperature on intrinsic and extrinsic semiconductors
3. Semiconductor Diodes (10 hrs)
3.1 PN Junction, mechanism of current flow in PN junction, drift and
diffusion currents, depletion layer, potential barrier, effect of forward
and reverse biasing in a PN junction. Concept of junction
capacitance in forward and reverse biased conditions. Breakdown
mechanism
3.2 Ideal diode, Semiconductor diode characteristics, static and
dynamic resistance
3.3 Use of diode as half wave and full wave rectifiers (centre tapped
and bridge type), relation between DC output and AC input voltage,
rectifier efficiency
3.4 Concept of ripples, filter circuits – shunt capacitor, series inductor,
and pie (π) filters and their applications
3.5 Diode ratings/specifications
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3.6 Various types of diodes such as zener diode, varactor diode,
schottky diode, light emitting diode, tunnel diode, photo diode; their
working characteristics and applications
3.7 Zener diode and its characteristics
3.8 Use of zener diode for voltage stabilization
4. Bi-polar Transistors (7 hrs)
4.1 Concept of junction transistor, PNP and NPN transistors, their
symbols and mechanism of current flow
4.2 Transistor configurations: common base (CB), common emitter (CE)
and common collector (CC), current relation and their input/output
characteristics; comparison of the three configurations
5. Transistor Biasing and Stabilization (8 hrs)
5.1 Transistor biasing, its need, operating point, effect of temperature
on the operating point of a transistor and need of stabilization of
operating point.
5.2 Different biasing circuits, limitations, simple problems to calculate
operating point in different biasing circuits. Use of Thevenin’s
theorem to determine operating point
5.3 Concept of h-parameters of a transistor
5.4 Use of data book to know the parameters of a given transistor
6. Single-Stage Transistor Amplifiers (10 hrs)
6.1 Single stage transistor amplifier circuit in CE configuration, function
of each component
6.2 Working of single stage transistor amplifier, physical and graphical
explanation, phase reversal
6.3 Concept of DC and AC load line
6.4 Voltage gain of single stage transistor amplifier using characteristics
of the device
6.5 Concept of input and output impedance
6.6 AC equivalent circuit of single stage transistor amplifiers
6.7 Calculation of voltage gain using AC equivalent circuit
6.8 Frequency response of a single stage transistor amplifier
7. Multi-Stage Transistor Amplifiers (7 hrs)
7.1 Need of multi-stage transistor amplifiers – different types of
couplings, their purpose and applications.
7.2 Knowledge of various terms such as voltage gain, current gain,
power gain, frequency response, decibel gain and band width
7.3 RC coupled two-stage amplifiers, circuit details, working, frequency
response, applications
7.4 Loading effect in multistage amplifiers
7.5 Elementary idea about direct coupled amplifier, its limitations and
applications
7.6 Transformer coupled amplifiers, its frequency response. Effect of
co-efficient of coupling on frequency response. Applications of
transformer coupled amplifiers
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8. Field Effect Transistor (FET) (07 hrs)
8.1 Construction, operation, characteristics and applications of a N
channel JFET and P channel JFET
8.2 JFET as an amplifier
8.3 Types, construction, operation, characteristics and applications of a
MOSFET
8.4 Comparison between BJT, JFET and MOSFET
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About This Question Paper Collection
Browse E1 3rd question papers for Diploma Electrical Engineering students at Himachal Pradesh Takniki Shiksha Board. This page helps students review question patterns, prepare for exams, and understand how previous papers are structured.
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Old question papers for Electronics-1 are a quick way to see how Himachal Pradesh Takniki Shiksha Board has structured exams in the past — useful for timing practice and identifying high-priority topics.
Treat them as a supplement, not a replacement, for the latest syllabus and official notices, and use them to build confidence before the actual exam.
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