SECTION-A
CONDUCTING MATERIALS:
Review of energy bands, description of materials, drift velocity, collision time, Mean free path, mobility,
conductivity, relaxation time, factors affecting conductivity of materials, types of thermal conductivity,
Wiedmann-Franz law, super conductivity, effect of magnetic field, conducting materials, applications.
SECTION-B
SEMICONDUCTORS, CONSTRUCTION AND CHARACTERISTICS OF DEVICES:
Review of Si and Ge as semiconducting materials, Continuity Equation, P-N junction, Drift & Diffusion,
Diffusion & Transition capacitances of P-N junction.
Brief introduction to Planar Technology for device fabrication. metal -semiconductor junctions (ohmic and
non-ohmic), breakdown mechanisms in p-n junction, zener diode, electrical and optical excitation in diodes,
LED, solar cells and photo-detectors. And characteristics.
SECTION-C
Transistors: Metal-semiconductor-field-effect-transistors (MESFET), Metal-insulator-semiconductor-fieldeffect-transistors
(MISFET), Metal oxide semiconductor field effect transistor (MOSFET): Construction,
Operation and characteristics of above devices.
Bipolar junction transistors: Fundamentals of BJT operation, amplification with BJTs,
SECTION –D
SOME SPECIAL DEVICES:
Photodiodes, photo detectors, solar cell, light emitting diodes, semiconductor lasers, light emitting materials.
Tunnel Diode: degenerate semiconductors, IMPATT diode; The transferred electron mechanism: The
GUNN diode.P-N-P-N diode, semiconductor controlled rectifier (SCR), bilateral devices: DIAC, TRIAC,
IGBT