Previous year question paper for ME (B-TECH electronics and communication engineering 6th)

INTRODUCTION: Advantages of IC’s, General classification of IC’s(Linear/Digital IC’s ,

Monolithic/ Hybrid IC’s), Basic IC fabrication steps

CRYSTAL GRTOWTH AND EPITAXY: Starting material for formation of crystal, Horizontal

Bridgeman Method, Czochralski growth, Distribution of dopants, Zone refining, Silicon Float

Zone process, Si-Wafer preparation, Epitaxial growth, Techniques used for epitaxial

growth(LPE,VPE,MBE)

SILICON OXIDATION: Thermal oxidation process (Kinetics of growth , Thin oxide growth),

Effect of impurities on the oxidation rate, Preoxidation Cleaning, Various oxidation

techniques, Masking properties of SiO2 , IV PHOTOLITHOGRAPHY AND ETCHING, Pattern

generation/Mask making, Contact and Proximity printing, Photoresistsl, Photolithography

Process(Lift off technology , Fine line photolithography), Wet/Dry etching, Reactive Plasma

etching techniques and applications

DIFFUSION AND ION IMPLANTATION: Basic diffusion process(Diffusion equation,

Diffusion profiles), Extrinsic diffusion, Lateral Diffusion, Ion Implantation Process (Ion

distribution , Ion Stopping), Implant Damage and Annealing process (Furnace and RTA), VI

IC PACKAGING, Isolation Techniques, Testing of the Chip, Wire Bonding techniques, Flip

Chip technique, Various Packaging methods and Materials, VII FABRICATION OF

MONOLITHIC COMPONENTS, Fabrication of Diodes, Resistors, capacitors and inductors,

Fabrication of BJT and FET, Fabrication of MOS Devices , CMOS fabrication techniques(nwell

and p-well process sequences), Introduction to MEMS.